Active Research Projects:
Materials Research
- Far from equilibrium semiconductor materials: B-III-V, Tl-III-V, III-V-Bi, and SiGeSn
- Novel materials systems: e.g. IV-VI
- Effects of surfactants and interfactants on epitaxial growth
- Heterogeneous integration of group-IV (C, Si, Ge, and Sn) with III-V materials
- Exploration of the fundamental epitaxial process through machine learning combined with multiscale
modeling and in operando sensing
- Phonon scattering reduction in infrared materials
- Auger recombination reduction in infrared materials
- Epitaxial semiconductor-semimetal junction
- Heterogeneous integration of group-IV (C, Si, Ge, and Sn)
with III-V materials
- Earth-abundant simultaneous transparent conducting oxide and
anti-reflective coating materials
- Transparent semiconductors for the mid to far infrared
- Optical properties of refractory metals
- Optical properties of semiconductors in the infrared
Photovoltaics (PVs)
- Monolithic multi-lattice multijunction ultra-efficient
concentrating PV solar cells
- Novel small band-gap sub-cell materials for multijunction cells
- Earth-abundant simultaneous transparent conducting oxide and
anti-reflective coating materials
- Earth-abundant PV materials
- Split junction concentrating photovoltaics.
Thermophotovoltaics (TPVs)
- Extended wavelength (2-10 micron) TPV cells
- Nano-structure enhanced performance TPV cells
- High temperature nanostructured emitters, see below
- Infrared rectennas for thermal energy harvesting
Metamaterials (MMs)
- High temperature selective thermal emitters for TPV cells
- Long wavelength selective thermal emitters for TPV cells
- Static and dynamic polarizers for photodetctor applications
- Photonic Crystal Filters for TPV and photodetector applications
- Fabry-Perot emitters
Photodetectors
- Type-II strained-layer superlattices (SLS) IR photodetectors
- Quantum dots in a well (DWELL) IR photodetectors
- Low-noise, multi-spectral, tunable, detectors for IR astronomy
High-Speed Devices
- Terahertz transistors
- High-speed, low-voltage, semimetal-semiconductor rectifying
diodes
- Novel strain-free gate/channel materials for high-speed (500+
GHz) DHBTs and FETs
Past Research Projects:
- Germanium quantum-dot quantum cellular automata (QCA)
- Silicon-Germanium quantum dot superlattices
- Sb-based type-II DHBT high-speed transistors
|