Link to Tufts SOE
Link to Home Page Lab members Research in lab Facilities in use Funding
glow1 PhC1 chip1 MM1
Lab outreach activities Lab publications and talks Useful links Who we work with....


Active Research Projects:

Materials Research

  • Far from equilibrium semiconductor materials: B-III-V, Tl-III-V, III-V-Bi, and SiGeSn
  • Novel materials systems: e.g. IV-VI
  • Effects of surfactants and interfactants on epitaxial growth
  • Heterogeneous integration of group-IV (C, Si, Ge, and Sn) with III-V materials
  • Exploration of the fundamental epitaxial process through machine learning combined with multiscale modeling and in operando sensing
  • Phonon scattering reduction in infrared materials
  • Auger recombination reduction in infrared materials
  • Epitaxial semiconductor-semimetal junction
  • Heterogeneous integration of group-IV  (C, Si, Ge, and Sn) with III-V materials
  • Earth-abundant simultaneous transparent conducting oxide and anti-reflective coating materials
  • Transparent semiconductors for the mid to far infrared
  • Optical properties of refractory metals
  • Optical properties of semiconductors in the infrared

Photovoltaics (PVs)

  • Monolithic multi-lattice multijunction ultra-efficient concentrating PV solar cells
  • Novel small band-gap sub-cell materials for multijunction cells
  • Earth-abundant simultaneous transparent conducting oxide and anti-reflective coating materials
  • Earth-abundant PV materials
  • Split junction concentrating photovoltaics.

Thermophotovoltaics (TPVs)

  • Extended wavelength (2-10 micron) TPV cells
  • Nano-structure enhanced performance TPV cells
  • High temperature nanostructured emitters, see below
  • Infrared rectennas for thermal energy harvesting

Metamaterials (MMs)

  • High temperature selective thermal emitters for TPV cells
  • Long wavelength selective thermal emitters for TPV cells
  • Static and dynamic polarizers for photodetctor applications
  • Photonic Crystal Filters for TPV and photodetector applications
  • Fabry-Perot emitters


  • Type-II strained-layer superlattices (SLS) IR photodetectors
  • Quantum dots in a well (DWELL) IR photodetectors
  • Low-noise, multi-spectral, tunable, detectors for IR astronomy

High-Speed Devices

  • Terahertz transistors
  • High-speed, low-voltage, semimetal-semiconductor rectifying diodes
  • Novel strain-free gate/channel materials for high-speed (500+ GHz) DHBTs and FETs

Past Research Projects:

  • Germanium quantum-dot quantum cellular automata (QCA)
  • Silicon-Germanium quantum dot superlattices
  • Sb-based type-II DHBT high-speed transistors